e l ek tr on isch e b a u e lemen te a b s o l u t e m a x i m u m r a t i n g s d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e c o n t i n u o u s d r a i n c u r r e n t p u l s e d d r a i n c u r r e n t t o t a l p o w e r d i s s i p a t i o n d r a i n - s o u r c e d i o d e f o r w a r d c u r r e n t o p e r a t i n g j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e p a r a m e t e r s y m b o l r a t i n g s u n i t p a r a m e t e r s y m b o l r a t i n g s u n i t t h e r m a l r e s i s t a n c e j u n c t i o n - a m b i e n t a v v m a m a / w c c m w v d s v g s i d @ t j = 1 2 5 i d m p d @ t a = 2 5 t j , t s t g r t h j - a - 6 0 2 0 - 2 5 0 - 1 8 5 3 6 0 - 1 - 5 5 ~ + 1 5 0 3 5 0 o o c o c o 1 2 1 1 i s t h e r m a l d a t a features * rugged and reliable * sot-23 package * super high dense cell design for low r ds(on) r o h s c o m p l i a n t p r o d u c t http://www.secosgmbh.com/ any changing of specification will not be informed individual s g d b l a 1 3 2 top view h c j k gate source drain d g s 01 -jun-2002 rev. a page 1 of 5 dim min max a 2.800 3.040 b 1.200 1.400 c 0.890 1.110 d 0.370 0.500 g 1.780 2.040 h 0.013 0.100 j 0.085 0.177 k 0.450 0.600 l 0.890 1.020 s 2.100 2.500 v 0.450 0.600 all dimension in mm sot-23 SMS0610 -0.185a, -60v,r ds(on) 7.5 p-channel enhancement mode power mos.fe t [
e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) o r d s ( o n ) p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e g a t e t h r e s h o l d v o l t a g e g a t e - s o u r c e l e a k a g e c u r r e n t d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e t u r n - o n d e l a y t i m e r i s e t i m e t u r n - o f f d e l a y t i m e f a l l t i m e i n p u t c a p a c i t a n c e o u t p u t c a p a c i t a n c e r e v e r s e t r a n s f e r c a p a c i t a n c e b v d s s v g s ( t h ) i g s s i d s s c r s s t d ( o n ) t d ( o f f ) t r c i s s c o s s t f - 6 0 1 0 - 1 7 . 5 1 0 2 . 8 6 . 5 1 0 7 . 2 8 0 1 1 4 v v u a u a n s p f [ v g s = 0 v v d s = - 2 5 v f = 1 . 0 m h z v d d = - 2 5 v i d = - 1 2 0 m a v g s = - 1 0 v r g = 6 [ v g s = - 1 0 v , i d = - 0 . 5 a v g s = - 4 . 5 v , i d = - 0 . 0 2 5 a v g s = 0 v , i d = - 1 0 u a v g s = 2 0 v , v d s = 0 v v d s = - 6 0 v , v g s = 0 v d s = v g s , i d = - 2 5 0 u a _ _ _ _ _ _ f o r w a r d o n v o l t a g e v s d _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ - 0 . 7 5 _ i d = - 2 0 0 m a , v g s = 0 v . v - 1 . 4 f o r w a r d t r a n s c o n d u c t a n c e g f s m s 4 3 0 v d s = - 1 0 v , i d = - 0 . 1 a _ _ _ - 3 c o - 1 o n - s t a t e d r a i n c u r r e n t i d ( o n ) 6 0 0 _ _ m a v d s = - 1 0 v , v g s = - 1 0 v _ n o t e s : 1 . s u r f a c e m o u n t e d o n f r 4 b o a r d ; t 1 0 s e c . guaranteed by design, not subject to production testing. 2 . p u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . ?? ?? 3 . ?? h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l 01 -jun-2002 rev. a page 2 of 5 e l e k t r o n i s c h e b a u e l e m e n t e s m s 0 6 1 0 - 0 . 1 8 5 a , - 6 0 v , r d s ( o n ) 7 . 5 p - c h a n n e l e n h a n c e m e n t m o d e p o w e r m o s . f e t [
http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 3 of 5 characteristics curve e l ek tr on isch e b a u e lemen te SMS0610 -0.185a, -60v,r ds(on) 7.5 p-channel enhancement mode power mos.fe t [ - v d s , d r a i n - t o - s o u r c e v o l t a g e ( v ) - i d , d r a i n c u r r e n t ( a ) f i g u r e 1 . o u t p u t c h a r a c t e r i s t i c s 0 5 10 15 20 25 30 -v ds , drain-to-source v oltage (v) c, capacitance (pf) figure 3. capacitance 0 10 20 30 40 50 60 -v gs , gate-to-source v oltage (v) -i d , drain current (a) figure 2. thansfer characteristics 1 1.5 2 2.5 3 3.5 4 4.5 figure 6. on-resistance v ariation with drain current and gate v oltage. 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.8 figure 5. on-resistance v ariation with gate-to-source v oltage. 2 4 6 8 10 r ds(on), normalized drain-source,on-resistance ( ? ) -50 -25 0 25 50 75 100 125 150 figure 4. on-resistance v ariation with t emperature v gs = -10v -3.0v -4.0v -3.5v -4.5v -2.0v -6.0v 1.0 0.8 0.6 0.4 0.2 0.0 1.2 1.4 -55 c o 25 c o t a = 125 c o v ds = -10v 1.0 0.8 0.6 0.4 0.2 0.0 1.2 ciss coss 60 40 20 0 80 100 crss tj , junction t emperature ( c) o v gs = -10v i d = -0.5a -v gs , gate-to-source v oltage (v) i d = -0.25a t a = 125 c o t a = 25 c o r ds(on), normalized drain-source,on-resistance ( ? ) 0 1 2 3 4 5 v gs = -3.0v -3.5v -4.0v -4.5v -5.0v -5.5v -i d , drain curren t (a) r ds(on), on-resistance ( ? ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 4 of 5 e l ek tr on isch e b a u e lemen te SMS0610 -0.185a, -60v,r ds(on) 7.5 p-channel enhancement mode power mos.fe t [ t 1 , t ime (sec) 0.01 0.1 1 10 100 figure 7. single pulse maximum power dissipation 1 10 60 100 10 1 0.1 0.01 p(pk), peak t ransient power (w) -i s , source-drain current (a) -v sd , body diode forward v oltage (v) figure 8. body diode forward v oltage v ariation with source current 0.2 0.4 0.6 0.8 1.0 1.2 -v gs , gate to source v oltage (v) figure 9. gate charge qg , t otal gate charge (nc) 0 0.4 0.8 1.2 1.6 2.0 -i d , drain current (a) 0.001 -v ds , drain-to-source v oltage (v) figure 10. maximum safe operating area single pulse r ja = 350 c/w t a = 25 c o o 0 1 2 3 4 5 v gs = 0v t a = 125 c o 25 c o -55 c o 0 20 40 60 80 100 i d = -0.5a v ds = -12v -48v -24v v gs = 10v single pulse t a = 25 c o r ds(on) limit 10ms 100ms 1s dc 10s 1ms 100us 0.0001 0.001 0.01 0.1 1 10
http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-jun-2002 rev. a page 5 of 5 e l ek tr on isch e b a u e lemen te SMS0610 -0.185a, -60v,r ds(on) 7.5 p-channel enhancement mode power mos.fe t [ figure 1 1. switching t est circuit v gs r gen v out v dd v in d r l g s figure 12. switching w aveforms inver ted pulse width t r t d(on) v out v in t on t of f t d(of f) t f 10% 50% 50% 90% 10% 90% 10% 90% figure 13. normalized thermal t ransient impedance curve t1 t2 p dm 1. r ja(t) = r(t)*r ja 2. r ja = see datasheet 3. t jm - t a = p dm *r ja(t) 4. duty cycle, d = t1/t2 10 10 10 10 10 10 1 -4 -3 -2 -1 2 0.001 0.01 0.05 0.1 0.2 0.5 1 single pulse r (t), normalized ef fective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 0.0.5 0.02 0.01 square w ave pulse duration (sec)
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